HighEfficiency and Highly Reliable 20 W GaAs Power FieldEffect ...
This paper describes a highperformance and highly reliable GaAs fieldeffect transistor (FET) with a new gate structure employing the stepped gate recess combined with a multirefractory metal gate. This gate structure allows the simultaneous increase of maximum channel current and gatedrain breakdown voltage (V gdo ) of the FET and thus improves significantly its output .
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